ES3DV M6
Taiwan Semiconductor Corporation
Deutsch
Artikelnummer: | ES3DV M6 |
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Hersteller / Marke: | Taiwan Semiconductor |
Teil der Beschreibung.: | DIODE GEN PURP 200V 3A DO214AB |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
Spannung - Sperr (Vr) (max) | 200 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-214AB (SMC) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 20 ns |
Produkteigenschaften | Eigenschaften |
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Verpackung / Gehäuse | DO-214AB, SMC |
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 200 V |
Strom - Richt (Io) | 3A |
Kapazität @ Vr, F | 45pF @ 4V, 1MHz |
DIODE GP 200V 3A SOD128/CFP5
200V, 3A HYPERFAST PN-RECTIFIER
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A SMB
DIODE GEN PURP 200V 3A DO214AB
DIODE GEN PURP 200V 3A DO214AB
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![]() ES3DV M6Taiwan Semiconductor Corporation |
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